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Dynamic Response Behavior of Femtosecond Laser-Annealed Indium Zinc Oxide Thin-Film Transistors
Fei Shan* and Sung-Jin Kim
Abstract A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process?based IZO TFTs exhibit a field-effect mobility of 3.75 cm2/Vs, an Ion/Ioff ratio of 1.77 105, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZObased inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.
Keyword IZO thin-film transistor, Femtosecond laser, Dynamic response, Pre-annealing, Solution process
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